High Performance Diamond Field-Effect Transistors on Hydrogen-Terminated Surface-Channel
نویسندگان
چکیده
منابع مشابه
Diamond Field Effect Transistors
High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...
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Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...
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Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effecttransistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FET...
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The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which ar...
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Diamond amplifiers demonstrably are an electron source with the potential to support high-brightness, highaverage-current emission into a vacuum. We recently developed a reliable hydrogenation procedure for the diamond amplifier. The systematic study of hydrogenation resulted in the reproducible fabrication of high gain diamond amplifier. Furthermore, we measured the emission probability of dia...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 2002
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.122.1_10